WML80R350S - аналоги и даташиты транзистора

 

WML80R350S - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WML80R350S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.33 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для WML80R350S

   - подбор ⓘ MOSFET транзистора по параметрам

 

WML80R350S Datasheet (PDF)

 ..1. Size:657K  way-on
 wml80r350s wmk80r350s wmn80r350s wmm80r350s wmj80r350s.pdf pdf_icon

WML80R350S

WML80R MK80R350R350S, WM 0S WMN , WMM80R MJ80R350N80R350S, R350S, WM 0S 800V 0.27 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S i

 8.1. Size:927K  way-on
 wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdf pdf_icon

WML80R350S

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET DescriptionWMOSTM S is Wayons new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications

 8.2. Size:672K  way-on
 wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf pdf_icon

WML80R350S

WML R480S, WM 0S L80R480S, WMO80R MK80R480WMN , WMM80R MJ80R480N80R480S, R480S, WM 0S 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOST

 8.3. Size:668K  way-on
 wmm80r1k5s wmn80r1k5s wmk80r1k5s wml80r1k5s wmp80r1k5s wmo80r1k5s.pdf pdf_icon

WML80R350S

WMM8 1K5S, WM 5S 80R1K5S, WMN80R1 MK80R1K5WML8 1K5S, WM 5S 80R1K5S, WMP80R1 MO80R1K5 800V 1.26 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMN80R160S , WMM80R160S , WMJ80R160S , WML80R260S , WMK80R260S , WMN80R260S , WMM80R260S , WMJ80R260S , AO3407 , WMK80R350S , WMN80R350S , WMM80R350S , WMJ80R350S , WML80R480S , WMO80R480S , WMK80R480S , WMN80R480S .

History: PHP78NQ03LT | JCS12N65CT | SGSP363 | BLP012N08-T | IPS80R1K4P7 | 2SK1446 | NP160N055TUJ

 

 
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