2SK2849-01L - описание и поиск аналогов

 ..1. Size:224K  1
 2sk2849-01l 2sk2849-01s.pdf 

 7.1. Size:356K  inchange semiconductor
 2sk2849s.pdf 

isc N-Channel MOSFET Transistor 2SK2849S FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 7.2. Size:282K  inchange semiconductor
 2sk2849l.pdf 

isc N-Channel MOSFET Transistor 2SK2849L FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.18 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.1. Size:417K  toshiba
 2sk2841.pdf 

2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2841 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Yfs = 8.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 400 V) Enhancement mode Vth = 2.0 to 4.0 V (VD

 8.2. Size:408K  toshiba
 2sk2846.pdf 

2SK2846 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2846 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 4.2 (typ.) (ON) High forward transfer admittance Y = 1.7 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0

 8.3. Size:411K  toshiba
 2sk2847.pdf 

2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2847 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.1 (typ.) (ON) High forward transfer admittance Y = 7.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1

 8.4. Size:411K  toshiba
 2sk2845.pdf 

2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2845 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 8.0 (typ.) High forward transfer admittance Y = 0.9 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V

 8.5. Size:425K  toshiba
 2sk2842.pdf 

2SK2842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2842 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.4 (typ.) (ON) High forward transfer admittance Y = 9.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V

 8.6. Size:426K  toshiba
 2sk2844.pdf 

2SK2844 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2844 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gate drive Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 26 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 30 V) DS Enhancement-

 8.7. Size:411K  toshiba
 2sk2843.pdf 

2SK2843 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2843 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.54 (typ.) (ON) High forward transfer admittance Y = 9.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V

 8.8. Size:43K  sanken-ele
 2sk2848.pdf 

2SK2848 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 600 V I = 100 A, V = 0V (BR) DSS D GS V 600 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 600V, V = 0V DSS DS GS I 2A D V 2.0 3.0 4.0 V V = 10V, I = 250 A TH DS D I 8

 8.9. Size:289K  inchange semiconductor
 2sk2841.pdf 

isc N-Channel MOSFET Transistor 2SK2841 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.10. Size:274K  inchange semiconductor
 2sk2847.pdf 

isc N-Channel MOSFET Transistor 2SK2847 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.11. Size:252K  inchange semiconductor
 2sk2848.pdf 

isc N-Channel MOSFET Transistor 2SK2848 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 2.8 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.12. Size:255K  inchange semiconductor
 2sk2842.pdf 

isc N-Channel MOSFET Transistor 2SK2842 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 8.13. Size:289K  inchange semiconductor
 2sk2844.pdf 

isc N-Channel MOSFET Transistor 2SK2844 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.14. Size:280K  inchange semiconductor
 2sk2843.pdf 

isc N-Channel MOSFET Transistor 2SK2843 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid