WML80R480S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WML80R480S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 183 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 25 nC
trⓘ - Время нарастания: 31 ns
Cossⓘ - Выходная емкость: 32 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.48 Ohm
Тип корпуса: TO220F
Аналог (замена) для WML80R480S
WML80R480S Datasheet (PDF)
wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdf
WML R480S, WM 0S L80R480S, WMO80R MK80R480WMN , WMM80R MJ80R480N80R480S, R480S, WM 0S 800V 0.4 S TSuper Junction Power MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOST
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WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET DescriptionWMOSTM S is Wayons new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications
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WMM8 1K5S, WM 5S 80R1K5S, WMN80R1 MK80R1K5WML8 1K5S, WM 5S 80R1K5S, WMP80R1 MO80R1K5 800V 1.26 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO
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WMM8 1K0S, WM 0S 80R1K0S, WMN80R1 MK80R1K0WML8 1K0S, WM 0S 80R1K0S, WMP80R1 MO80R1K0 800V 0.87 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO
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WML80R MK80R350R350S, WM 0S WMN , WMM80R MJ80R350N80R350S, R350S, WM 0S 800V 0.27 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S i
wml80r260s wmk80r260s wmn80r260s wmm80r260s wmj80r260s.pdf
WML80R MK80R260R260S, WM 0S WMN , WMM80R MJ80R260N80R260S, R260S, WM 0S 800V 0.22 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S is
wmm80r720s wmn80r720s wmk80r720s wml80r720s wmp80r720s wmo80r720s.pdf
WMM R720S, WM 0S M80R720S, WMN80R MK80R720WML R720S, WM 0S L80R720S, WMP80R MO80R720 800V 0.68 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low gate charge performan WMO
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918