WMN80R480S - описание и поиск аналогов

 

WMN80R480S. Аналоги и основные параметры

Наименование производителя: WMN80R480S

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 138 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 31 ns

Cossⓘ - Выходная емкость: 32 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.48 Ohm

Тип корпуса: TO262

Аналог (замена) для WMN80R480S

- подборⓘ MOSFET транзистора по параметрам

 

WMN80R480S даташит

 ..1. Size:672K  way-on
wml80r480s wmo80r480s wmk80r480s wmn80r480s wmm80r480s wmj80r480s.pdfpdf_icon

WMN80R480S

WML R480S, WM 0S L80R480S, WMO80R MK80R480 WMN , WMM80R MJ80R480 N80R480S, R480S, WM 0S 800V 0.4 S T Super Junction Power MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G and low gate charge performan WMOST

 8.1. Size:927K  way-on
wml80r160s wmk80r160s wmn80r160s wmm80r160s wmj80r160s.pdfpdf_icon

WMN80R480S

WML80R160S, WMK80R160S WMN80R160S, WMM80R160S, WMJ80R160S 800V 0.16 Super Junction Power MOSFET Description WMOSTM S is Wayon s new generation super junction MOSFET family that is utilizing charge S balance technology for extremely low on-resistance S D D G G S D G and low gate charge performance. WMOSTM S is TO-220F TO-262 TO-220 suitable for applications

 8.2. Size:668K  way-on
wmm80r1k5s wmn80r1k5s wmk80r1k5s wml80r1k5s wmp80r1k5s wmo80r1k5s.pdfpdf_icon

WMN80R480S

WMM8 1K5S, WM 5S 80R1K5S, WMN80R1 MK80R1K5 WML8 1K5S, WM 5S 80R1K5S, WMP80R1 MO80R1K5 800V 1.26 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low gate charge performan WMO

 8.3. Size:669K  way-on
wmm80r1k0s wmn80r1k0s wmk80r1k0s wml80r1k0s wmp80r1k0s wmo80r1k0s.pdfpdf_icon

WMN80R480S

WMM8 1K0S, WM 0S 80R1K0S, WMN80R1 MK80R1K0 WML8 1K0S, WM 0S 80R1K0S, WMP80R1 MO80R1K0 800V 0.87 S unction Power M T Super Ju MOSFET Descrip ption WMOSTM S is Way new generation super yon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low gate charge performan WMO

Другие MOSFET... WML80R350S , WMK80R350S , WMN80R350S , WMM80R350S , WMJ80R350S , WML80R480S , WMO80R480S , WMK80R480S , IRF840 , WMM80R480S , WMJ80R480S , WML90R260S , WMK90R260S , WMN90R260S , WMM90R260S , WMJ90R260S , WML90R360S .

History: VS4N65CD | 2N4003K

 

 

 

 

↑ Back to Top
.