WMJ90R260S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMJ90R260S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 227 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 55 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.26 Ohm
Тип корпуса: TO247
Аналог (замена) для WMJ90R260S
WMJ90R260S Datasheet (PDF)
wml90r260s wmk90r260s wmn90r260s wmm90r260s wmj90r260s.pdf

WML90R MK90R260R260S, WM 0S WMN , WMM90R MJ90R260N90R260S, R260S, WM 0S 900V 0.23 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S is
wml90r360s wmk90r360s wmn90r360s wmm90r360s wmj90r360s.pdf

WML90R MK90R360R360S, WM 0S WMN , WMM90R MJ90R360N90R360S, R360S, WM 0S 900V 0.28 S unction P MOSFET0 Super Ju Power M TDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan WMOSTM S i
wml90r500s wmo90r500s wmk90r500s wmn90r500s wmm90r500s wmj90r500s .pdf

WML R500S, WM 0S L90R500S, WMO90R MK90R500WMN , WMM90R MJ90R500N90R500S, R500S, WM 0S 900V 0.41 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM S is Way new generation super yons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low gate charge performan
wmj90n60f2.pdf

WM F2 MJ90N60F 600V 0.025 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more
Другие MOSFET... WMK80R480S , WMN80R480S , WMM80R480S , WMJ80R480S , WML90R260S , WMK90R260S , WMN90R260S , WMM90R260S , IRFP460 , WML90R360S , WMK90R360S , WMN90R360S , WMM90R360S , WMJ90R360S , WML90R500S , WMO90R500S , WMK90R500S .
History: KNB1906A | IRFS4227PBF | NP60N03SUG | SI7153DN | SFW025N100C3 | FDMC86265P | NTR3161NT1G
History: KNB1906A | IRFS4227PBF | NP60N03SUG | SI7153DN | SFW025N100C3 | FDMC86265P | NTR3161NT1G



Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor | bc182b | 2n3054 transistor equivalent | 2n554 | 2sa1011 | 2sa1283