Справочник MOSFET. WMLL020NV8HGS

 

WMLL020NV8HGS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMLL020NV8HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 347.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 300 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 1515 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: TOLL
 

 Аналог (замена) для WMLL020NV8HGS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMLL020NV8HGS Datasheet (PDF)

 ..1. Size:621K  way-on
wmll020nv8hgs.pdfpdf_icon

WMLL020NV8HGS

WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020NV8HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 6.1. Size:613K  way-on
wmll020n10hgs.pdfpdf_icon

WMLL020NV8HGS

WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 6.2. Size:644K  way-on
wmll020n10hg4.pdfpdf_icon

WMLL020NV8HGS

WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N10HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicat

 6.3. Size:619K  way-on
wmll020n08hgs.pdfpdf_icon

WMLL020NV8HGS

WMLL020N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL020N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

Другие MOSFET... WMJ90R500S , WMLL010N04LG4 , WMLL013N08HGS , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , 2N7000 , WMLL025N10HGS , WMLL030N12HGS , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS .

History: IRFS4510 | HSP0048 | STP3467 | IRF542FI | HY1707P | R6004JNX

 

 
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