Справочник MOSFET. WMLL030N12HGS

 

WMLL030N12HGS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMLL030N12HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 365.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 225 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 50.6 ns
   Cossⓘ - Выходная емкость: 733 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TOLL
 

 Аналог (замена) для WMLL030N12HGS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMLL030N12HGS Datasheet (PDF)

 ..1. Size:634K  way-on
 wmll030n12hgs.pdf pdf_icon

WMLL030N12HGS

WMLL030N12HGS 120V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL030N12HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 9.1. Size:635K  way-on
 wmll013n08hgs.pdf pdf_icon

WMLL030N12HGS

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 9.2. Size:632K  way-on
 wmll025n10hgs.pdf pdf_icon

WMLL030N12HGS

WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL025N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 9.3. Size:634K  way-on
 wmll014n06hg4.pdf pdf_icon

WMLL030N12HGS

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMLL013N08HGS , WMLL014N06HG4 , WMLL017N10HGS , WMLL020N08HGS , WMLL020N10HG4 , WMLL020N10HGS , WMLL020NV8HGS , WMLL025N10HGS , 12N60 , WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS , WMM023N08HGS , WMM028N10HG2 .

History: HUF76419SF085 | FCP190N65S3R0 | APT50M50L2LL | NCEP6090 | SI25N10 | HY3410MF | 2SK1180

 

 
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