WMLL030N12HGS - описание и поиск аналогов

WMLL030N12HGS 120V N-Channel Enhancement Mode Power MOSFET Description D D WMLL030N12HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL013N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL025N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D WMLL014N06HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati

WMLL020NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020NV8HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

WMLL020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

WMLL020N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N10HG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicat

WMLL065N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description D D WMLL065N15HG2 uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

WMLL040N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description D D WMLL040N15HG2 uses Wayon's 2nd generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicat

WMLL010N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D WMLL010N04LG4 uses Wayon's 4th generation power trench S MOSFET technology that has been especially tailored to minimize the S G S S S S S S S S on-state resistance and yet maintain superior switching performance. S S G S S This device is well suited for high efficiency fast switching applicati

WMLL020N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D WMLL020N08HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

WMLL099N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description D D WMLL099N20HG2 uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.

WMLL017N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D WMLL017N10HGS uses Wayon's advanced power trench MOSFET S technology that has been especially tailored to minimize the on-state S G S S S S S S S S resistance and yet maintain superior switching performance. This S S G S S device is well suited for high efficiency fast switching applications.