Справочник MOSFET. WMLL065N15HG2

 

WMLL065N15HG2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMLL065N15HG2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 394.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 172 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 480 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TOLL
     - подбор MOSFET транзистора по параметрам

 

WMLL065N15HG2 Datasheet (PDF)

 ..1. Size:628K  way-on
 wmll065n15hg2.pdf pdf_icon

WMLL065N15HG2

WMLL065N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL065N15HG2 uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 9.1. Size:635K  way-on
 wmll013n08hgs.pdf pdf_icon

WMLL065N15HG2

WMLL013N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL013N08HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 9.2. Size:632K  way-on
 wmll025n10hgs.pdf pdf_icon

WMLL065N15HG2

WMLL025N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL025N10HGS uses Wayon's advanced power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SGSSSSSSSSresistance and yet maintain superior switching performance. This SSGSSdevice is well suited for high efficiency fast switching applications.

 9.3. Size:634K  way-on
 wmll014n06hg4.pdf pdf_icon

WMLL065N15HG2

WMLL014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionDDWMLL014N06HG4 uses Wayon's 4th generation power trench SMOSFET technology that has been especially tailored to minimize the SGSSSSSSSSon-state resistance and yet maintain superior switching performance. SSGSSThis device is well suited for high efficiency fast switching applicati

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History: AM40N20-180P | DH105N07D | TT8M3 | SST65R600S2 | VBFB1405 | GT1003B | IPI600N25N3G

 

 
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