WMM028N10HGS - аналоги и даташиты транзистора

 

WMM028N10HGS - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WMM028N10HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 379 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 257 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 78.5 ns
   Cossⓘ - Выходная емкость: 1505 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для WMM028N10HGS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMM028N10HGS Datasheet (PDF)

 ..1. Size:708K  way-on
 wmm028n10hgs.pdf pdf_icon

WMM028N10HGS

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 257A

 3.1. Size:678K  way-on
 wmm028n10hg2.pdf pdf_icon

WMM028N10HGS

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications. STO-263Features V =100V, I = 245

 9.1. Size:665K  way-on
 wmm020n06hg4.pdf pdf_icon

WMM028N10HGS

WMM020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 60V, I = 25

 9.2. Size:694K  way-on
 wmm020n10hgs.pdf pdf_icon

WMM028N10HGS

WMM020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications.TO-263Features V = 100V, I = 280A

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMLL040N15HG2 , WMLL065N15HG2 , WMLL099N20HG2 , WMM015N08HGS , WMM020N06HG4 , WMM020N10HGS , WMM023N08HGS , WMM028N10HG2 , IRF9540N , WMM030N06HG4 , WMM036N12HGS , WMM037N10HGS , WMM040N08HGS , WMM040N15HG2 , WMM043N10HGS , WMM048NV6HG4 , WMM053N10HGS .

History: S80N18RP | 2N90G-TF3-T | NTMFD4C85N | STL3NK40 | STL34N65M5 | NTJS3157NT1G

 

 
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