Справочник MOSFET. WMM028N10HGS

 

WMM028N10HGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMM028N10HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 379 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 257 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 150 nC
   trⓘ - Время нарастания: 78.5 ns
   Cossⓘ - Выходная емкость: 1505 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: TO263

 Аналог (замена) для WMM028N10HGS

 

 

WMM028N10HGS Datasheet (PDF)

 ..1. Size:708K  way-on
 wmm028n10hgs.pdf

WMM028N10HGS WMM028N10HGS

WMM028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 100V, I = 257A

 3.1. Size:678K  way-on
 wmm028n10hg2.pdf

WMM028N10HGS WMM028N10HGS

WMM028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This device Gis well suited for high efficiency fast switching applications. STO-263Features V =100V, I = 245

 9.1. Size:665K  way-on
 wmm020n06hg4.pdf

WMM028N10HGS WMM028N10HGS

WMM020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications. TO-263Features V = 60V, I = 25

 9.2. Size:694K  way-on
 wmm020n10hgs.pdf

WMM028N10HGS WMM028N10HGS

WMM020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMM020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state Dresistance and yet maintain superior switching performance. This GSdevice is well suited for high efficiency fast switching applications.TO-263Features V = 100V, I = 280A

 9.3. Size:654K  way-on
 wmm023n08hgs.pdf

WMM028N10HGS WMM028N10HGS

WMM023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMM023N08HGS uses Wayon's advanced power trench MOSFET Dtechnology that has been especially tailored to minimize the on-state Gresistance and yet maintain superior switching performance. This Sdevice is well suited for high efficiency fast switching applications.TO-263Features V = 80V, I = 270A DS

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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