Справочник MOSFET. WMO07N60C4

 

WMO07N60C4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMO07N60C4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 9.9 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.14 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для WMO07N60C4

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMO07N60C4 Datasheet (PDF)

 ..1. Size:662K  way-on
 wmm07n60c4 wml07n60c4 wmo07n60c4 wmn07n60c4 wmp07n60c4 wmk07n60c4.pdf pdf_icon

WMO07N60C4

WMM0 60C4, MO07N60C07N60C4, WML07N6 WM C4 WMN0 60C4, MK07N60C07N60C4, WMP07N6 WM C4 600V 0.96 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 7.1. Size:636K  way-on
 wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf pdf_icon

WMO07N60C4

WML0 MM07N65C07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C07N65C2, WMP07N65C2, WM C2 650 Junction ET0V 1.0 Super J n Power MOSFEDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

 7.2. Size:663K  way-on
 wmm07n65c4 wml07n65c4 wmo07n65c4 wmn07n65c4 wmp07n65c4 wmk07n65c4.pdf pdf_icon

WMO07N60C4

WMM0 65C4, MO07N65C07N65C4, WML07N6 WM C4 WMN0 65C4, MK07N65C07N65C4, WMP07N6 WM C4 650V 0.96 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 8.1. Size:731K  way-on
 wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdf pdf_icon

WMO07N60C4

WM 2, WMN07N MM07N100CML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100CMO07N100C N100C2, WM C2 1000V Super Ju MOSFETV 2.0 S unction Power M TDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMM040N15HG2 , WMM043N10HGS , WMM048NV6HG4 , WMM053N10HGS , WMM053NV8HGS , WMM071N15HG2 , WMM07N60C4 , WML07N60C4 , IRFP250 , WMN07N60C4 , WMP07N60C4 , WMK07N60C4 , WMM07N65C4 , WML07N65C4 , WMO07N65C4 , WMN07N65C4 , WMP07N65C4 .

History: WMM18N50C4 | IRF8788PBF | SL120N03R

 

 
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