Справочник MOSFET. WMO07N70C4

 

WMO07N70C4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMO07N70C4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 9.9 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.14 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для WMO07N70C4

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMO07N70C4 Datasheet (PDF)

 ..1. Size:661K  way-on
 wmm07n70c4 wml07n70c4 wmo07n70c4 wmn07n70c4 wmp07n70c4 wmk07n70c4.pdf pdf_icon

WMO07N70C4

WMM0 70C4, MO07N70C07N70C4, WML07N7 WM C4 WMN0 70C4, MK07N70C07N70C4, WMP07N7 WM C4 700V 0.96 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 8.1. Size:731K  way-on
 wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdf pdf_icon

WMO07N70C4

WM 2, WMN07N MM07N100CML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100CMO07N100C N100C2, WM C2 1000V Super Ju MOSFETV 2.0 S unction Power M TDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low

 8.2. Size:636K  way-on
 wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf pdf_icon

WMO07N70C4

WML0 MM07N65C07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C07N65C2, WMP07N65C2, WM C2 650 Junction ET0V 1.0 Super J n Power MOSFEDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

 8.3. Size:679K  way-on
 wml07n80m3 wmn07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3.pdf pdf_icon

WMO07N70C4

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80MWMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET0V 1.6 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMM07N65C4 , WML07N65C4 , WMO07N65C4 , WMN07N65C4 , WMP07N65C4 , WMK07N65C4 , WMM07N70C4 , WML07N70C4 , SKD502T , WMN07N70C4 , WMP07N70C4 , WMK07N70C4 , WMM08N60C4 , WML08N60C4 , WMO08N60C4 , WMN08N60C4 , WMP08N60C4 .

History: WFP85N06 | IPP80N06S4L-07 | IRLR3103PBF | SI5406DC | STL130N8F7 | SSI4N80AS | VBZMB18N50

 

 
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