Справочник MOSFET. WMN08N70C4

 

WMN08N70C4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMN08N70C4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 15 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.78 Ohm
   Тип корпуса: TO262
     - подбор MOSFET транзистора по параметрам

 

WMN08N70C4 Datasheet (PDF)

 ..1. Size:670K  way-on
wmm08n70c4 wml08n70c4 wmo08n70c4 wmn08n70c4 wmp08n70c4 wmk08n70c4.pdfpdf_icon

WMN08N70C4

WMM0 70C4, MO08N70C08N70C4, WML08N7 WM C4 WMN0 70C4, MK08N70C08N70C4, WMP08N7 WM C4 700V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 6.1. Size:668K  way-on
wml08n70em wmk08n70em wmm08n70em wmn08n70em wmp08n70em wmo08n70em.pdfpdf_icon

WMN08N70C4

WML08 WMK08N78N70EM, W 70EM, WMM08N70EM WMN08 WMP08N78N70EM, W 70EM, WMO08N70EM 700V Power M T V 0.8 Super Junction P MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is at

 8.1. Size:667K  way-on
wmm08n60c4 wml08n60c4 wmo08n60c4 wmn08n60c4 wmp08n60c4 wmk08n60c4.pdfpdf_icon

WMN08N70C4

WMM0 60C4, MO08N60C08N60C4, WML08N6 WM C4 WMN0 60C4, MK08N60C08N60C4, WMP08N6 WM C4 600V 0.65 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WM

 8.2. Size:668K  way-on
wml08n65em wmk08n65em wmm08n65em wmn08n65em wmp08n65em wmo08n65em.pdfpdf_icon

WMN08N70C4

WML08 WMK08N68N65EM, W 65EM, WMM08N65EM WMN08 WMP08N68N65EM, W 65EM, WMO08N65EM 650V 0.8 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is a

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMP56D0UFB | AP2623GY-HF | AOTF12N50 | MEE7816S | DMG7401SFG | WMK80R350S | MS65R120C

 

 
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