WML10N65C4 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WML10N65C4
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 27 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 19 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220F
Аналог (замена) для WML10N65C4
WML10N65C4 Datasheet (PDF)
wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf

WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM
wml10n65d1b wmk10n65d1b.pdf

WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax
wml10n65em wmk10n65em wmm10n65em wmn10n65em wmp10n65em wmo10n65em.pdf

WML10 WMK10N60N65EM, W 65EM, WMM10N65EM WMN10 WMP10N60N65EM, W 65EM, WMO10N65EM 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate
wmm10n60c4 wml10n60c4 wmo10n60c4 wmn10n60c4 wmp10n60c4 wmk10n60c4.pdf

WMM10N60C4, WML10N6 WM C4 60C4, MO10N60CWMN10N60C4, WMP10N6 WM C4 60C4, MK10N60C 600V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM
Другие MOSFET... WMK08N70C4 , WMM10N60C4 , WML10N60C4 , WMO10N60C4 , WMN10N60C4 , WMP10N60C4 , WMK10N60C4 , WMM10N65C4 , HY1906P , WMO10N65C4 , WMN10N65C4 , WMP10N65C4 , WMK10N65C4 , WMM10N70C4 , WML10N70C4 , WMO10N70C4 , WMN10N70C4 .
History: STU1955NL | IRF630PBF | IRFP450B | IRLR3303PBF | STD4NK50Z-1 | AUIRFP4410Z | SQJA86EP
History: STU1955NL | IRF630PBF | IRFP450B | IRLR3303PBF | STD4NK50Z-1 | AUIRFP4410Z | SQJA86EP



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