WMK10N70C4 - Даташиты. Аналоги. Основные параметры
Наименование производителя: WMK10N70C4
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 57 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 19 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220
Аналог (замена) для WMK10N70C4
WMK10N70C4 Datasheet (PDF)
wmm10n70c4 wml10n70c4 wmo10n70c4 wmn10n70c4 wmp10n70c4 wmk10n70c4.pdf
WMM10N70C4, WML10N7 WM C4 70C4, MO10N70CWMN10N70C4, WMP10N7 WM C4 70C4, MK10N70C 700V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM
wml10n70em wmk10n70em wmm10n70em wmn10n70em wmp10n70em wmo10n70em.pdf
WML10 WMK10N70N70EM, W 70EM, WMM10N70EM WMN10 WMP10N70N70EM, W 70EM, WMO10N70EM 700V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is ate
wml10n65d1b wmk10n65d1b.pdf
WML10N65D1B WMK10N65D1B 650V 10A 0.75 N-ch Power MOSFET Description TO-220 TO-220F WMOSTM D1 is Wayons 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. G G D S D S Features V =700V@T DS jmax
wmm10n65c4 wml10n65c4 wmo10n65c4 wmn10n65c4 wmp10n65c4 wmk10n65c4.pdf
WMM10N65C4, WML10N6 WM C4 65C4, MO10N65CWMN10N65C4, WMP10N6 WM C4 65C4, MK10N65C 650V 0.52 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM
Другие MOSFET... WMN10N65C4 , WMP10N65C4 , WMK10N65C4 , WMM10N70C4 , WML10N70C4 , WMO10N70C4 , WMN10N70C4 , WMP10N70C4 , 20N60 , WMM115N15HG4 , WMM120N04TS , WMM120P06TS , WMM13N50C4 , WML13N50C4 , WMO13N50C4 , WMN13N50C4 , WMP13N50C4 .
History: AOB12N65L | 2N7002AQ | WMP06N80M3 | DMT4N65 | DMF4N65 | AOB2502L
History: AOB12N65L | 2N7002AQ | WMP06N80M3 | DMT4N65 | DMF4N65 | AOB2502L
Список транзисторов
Обновления
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