FDPF8N50NZF. Аналоги и основные параметры
Наименование производителя: FDPF8N50NZF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: TO220F
Аналог (замена) для FDPF8N50NZF
- подборⓘ MOSFET транзистора по параметрам
FDPF8N50NZF даташит
fdp8n50nzf fdpf8n50nzf.pdf
February 2010 UniFET-IITM FDP8N50NZF / FDPF8N50NZF tm N-Channel MOSFET 500V, 7A, 1 Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has
fdpf8n50nzf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdp8n50nz fdpf8n50nzt.pdf
October 2009 UniFETTM FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been
fdp8n50nz fdpf8n50nz fdpf8n50nzt.pdf
March 2010 UniFETTM FDP8N50NZ / FDPF8N50NZ tm N-Channel MOSFET 500V, 8A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been es
Другие MOSFET... FDPF680N10T , STF620S , FDPF6N60ZUT , STF445 , FDPF770N15A , FDPF7N60NZ , STF443 , FDPF8N50NZ , IRF9540N , FDPF8N50NZU , FDPF8N60ZUT , STF2459A , FDQ7236AS , STF2458A , FDQ7238AS , STF2458 , FDS2572 .
History: FQB9N50C
History: FQB9N50C
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