WMO09P10TS. Аналоги и основные параметры

Наименование производителя: WMO09P10TS

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 54.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.5 ns

Cossⓘ - Выходная емкость: 29.8 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.31 Ohm

Тип корпуса: TO252

Аналог (замена) для WMO09P10TS

- подборⓘ MOSFET транзистора по параметрам

 

WMO09P10TS даташит

 ..1. Size:980K  way-on
 wmo09p10ts.pdf pdf_icon

WMO09P10TS

WMO09P10TS 100V P-Channel Enhancement Mode Power MOSFET Description WMO09P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S G Features TO-252 V = -100V, I = -9A DS D R

 9.1. Size:985K  way-on
 wmo090nv6hg4.pdf pdf_icon

WMO09P10TS

WMO090NV6HG4 65V N-Channel Enhancement Mode Power MOSFET Description WMO090NV6HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S G device is well suited for high efficiency fast switching applications. TO-252 Features V = 65V, I = 68

 9.2. Size:583K  way-on
 wmo099n10hgs.pdf pdf_icon

WMO09P10TS

WMO099N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMO099N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This S device is well suited for high efficiency fast switching applications. G TO-252 Features V = 100V, I = 67A

 9.3. Size:636K  way-on
 wmo09n20dm.pdf pdf_icon

WMO09P10TS

WMO09N20DM 200V 9A 0.3 N-ch Power MOSFET Description WMO09N20DM is Wayon s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for D applications requiring high power density and high efficiency. And it is S very robust and RoHS compliant. G TO-252 Features V = 200V, I = 9A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... WMO060N10HGS, WMO080N10HG2, WMO090NV6HG4, WMO099N10HGS, WMO099N10LGS, WMO09N15TS, WMO09N20DM, WMO09N20DMH, 20N50, WMO100N07T1, WMO115N15HG4, WMO119N12LG4, WMO120N04TS, WMO12P05T1, WMO12P06TS, WMO13N10TS, WMO13P06T1