Справочник MOSFET. WMO15N15T1

 

WMO15N15T1 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMO15N15T1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 44.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 53 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

WMO15N15T1 Datasheet (PDF)

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wmo15n15t1.pdfpdf_icon

WMO15N15T1

WMO15N15T1 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N15T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DSFeatures G V = 150V, I = 15A DS DTO-252R

 7.1. Size:436K  way-on
wmo15n10t1.pdfpdf_icon

WMO15N15T1

WMO15N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 100V, I = 14.6A DS DR

 7.2. Size:607K  way-on
wmo15n12ts.pdfpdf_icon

WMO15N15T1

WMO15N12TS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 120V, I = 14.5A DS DTO-252R

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wml15n60c4 wmk15n60c4 wmm15n60c4 wmn15n60c4 wmp15n60c4 wmo15n60c4.pdfpdf_icon

WMO15N15T1

WML1 MM15N60C15N60C4, WMK15N60C4, WM C4 WMN15N60C4, WMP15N60C4, WM C4 MO15N60C 600V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

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History: BUZ905DP | SQJ460AEP | NCE0224 | IRF6217 | 2SK56 | IRC8405 | 7N65KG-T2Q-T

 

 
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