Справочник MOSFET. STF2458

 

STF2458 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STF2458
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 24 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Qgⓘ - Общий заряд затвора: 14 nC
   Cossⓘ - Выходная емкость: 241 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
   Тип корпуса: TDFN2X3

 Аналог (замена) для STF2458

 

 

STF2458 Datasheet (PDF)

 ..1. Size:100K  samhop
 stf2458.pdf

STF2458 STF2458

GreenProductSTF2458aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.9.5 @ VGS=4.5VSuface Mount Package.10.2 @ VGS=4.0V 24V 10A 10.4 @ VGS=3.7V ESD Protected.11.5 @ VGS=3.1V14.0 @ VGS=2.5VG2Bottom Drain

 0.1. Size:87K  samhop
 stf2458a.pdf

STF2458 STF2458

GreerrPPrPrProSTF2458AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.10.0 @ VGS=4.5VSuface Mount Package.10.5 @ VGS=4.0V24V 10A 11.0 @ VGS=3.7V ESD Protected.12.0 @ VGS=3.1V15.5 @ VGS=2.5VBott

 8.1. Size:96K  samhop
 stf2459a.pdf

STF2458 STF2458

GreenProductSTF2459AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.6.2 @ VGS=10VSuface Mount Package.7.5 @ VGS=4.5V ESD Protected.8.0 @ VGS=4.0V 24V 12A8.6 @ VGS=3.7V10.3 @ VGS=3.1V16.3 @ VGS=2.5V

 8.2. Size:92K  samhop
 stf2456.pdf

STF2458 STF2458

GreerrPPrPrProdSTF2456aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.18.5 @ VGS=4.5VSuface Mount Package.20.0 @ VGS=4.0V24V 7.0A 20.5 @ VGS=3.7V ESD Protected.22.5 @ VGS=3.1V28.0 @ VGS=2.5VG2

 8.3. Size:98K  samhop
 stf2454a.pdf

STF2458 STF2458

GreenProductSTF2454AaS mHop Microelectronics C orp.Ver 3.2Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14.0 @ VGS=4.5VSuface Mount Package.14.3 @ VGS=4.0V24V 8.6A 14.5 @ VGS=3.7V ESD Protected.16.5 @ VGS=3.1V20.0 @ VGS=2.5VBottom Drain Co

 8.4. Size:106K  samhop
 stf2454.pdf

STF2458 STF2458

GreenProductSTF2454aS mHop Microelectronics C orp.Ver 2.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14.0 @ VGS=4.5VSuface Mount Package.14.3 @ VGS=4.0V24V 8.0A 14.5 @ VGS=3.7V ESD Protected.16.5 @ VGS=3.1V20.0 @ VGS=2.5VG2Bottom Drain

 8.5. Size:96K  samhop
 stf2455.pdf

STF2458 STF2458

GreenProductSTF2455aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.6.2 @ VGS=4.5VSuface Mount Package.6.3 @ VGS=4.0V 24V 13A 6.5 @ VGS=3.7V ESD Protected.7.0 @ VGS=3.1V8.5 @ VGS=2.5VD DDDG GST D

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