Справочник MOSFET. WMQ30DN04TS

 

WMQ30DN04TS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMQ30DN04TS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 18.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5.6 ns
   Cossⓘ - Выходная емкость: 108 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0145 Ohm
   Тип корпуса: PDFN3030-8L
 

 Аналог (замена) для WMQ30DN04TS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMQ30DN04TS Datasheet (PDF)

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WMQ30DN04TS

WMQ30DN04TS 40V Dual N-Channel Enhancement Mode Power MOSFET D2D1Description D2D1D1D2D1D2WMQ30DN04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S1G2G1S2S2G1G2maintain superior switching performance. S1PDFN3030-8LFeatures V = 40V, I = 28A DS D R

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 wmq30dp03ts.pdf pdf_icon

WMQ30DN04TS

WMQ30DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET DescriptionD2D1D2D1D1D2WMQ30DP03TS uses advanced power trench technology that D1D2has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1G2G1S2S2G1Features G2S1 V = -30V, I = -30A DS DPDFN3030-8LR

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 wmq30n03t2.pdf pdf_icon

WMQ30DN04TS

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N03T2 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 30V, I = 30A DS DR

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 wmq30n02t1.pdf pdf_icon

WMQ30DN04TS

WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET DescriptionDDDWMQ30N02T1 uses advanced power trench technology that has DDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. SGSSSSGSFeatures PDFN3030-8L V = 20V, I =75A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMQ18P04TS , WMQ20DN06TS , WMQ20N06TS , WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , P0903BDG , WMQ30DP03TS , WMQ30N02T1 , WMQ30N03T2 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS .

History: KIA7N60H-220

 

 
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