WMQ30N03T2 - описание и поиск аналогов

 

WMQ30N03T2. Аналоги и основные параметры

Наименование производителя: WMQ30N03T2

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 39 ns

Cossⓘ - Выходная емкость: 398 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0063 Ohm

Тип корпуса: PDFN3030-8L

Аналог (замена) для WMQ30N03T2

- подборⓘ MOSFET транзистора по параметрам

 

WMQ30N03T2 даташит

 ..1. Size:640K  way-on
wmq30n03t2.pdfpdf_icon

WMQ30N03T2

WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ30N03T2 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 30V, I = 30A DS D R

 7.1. Size:594K  way-on
wmq30n02t1.pdfpdf_icon

WMQ30N03T2

WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ30N02T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 20V, I =75A DS D R

 7.2. Size:479K  way-on
wmq30n06ts.pdfpdf_icon

WMQ30N03T2

WMQ30N06TS 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ30N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S G S S S S maintain superior switching performance. G S PDFN3030-8L Features V = 60V, I = 30A DS D R

 7.3. Size:658K  way-on
wmq30n04ts.pdfpdf_icon

WMQ30N03T2

WMQ30N04TS 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ30N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S G S S S S G maintain superior switching performance. S PDFN3030-8L Features V = 40V, I = 30A DS D R

Другие MOSFET... WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , 5N60 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS , WMQ37N03T1 , WMQ40DN03T1 , WMQ40N03T1 .

History: 2SK1013 | IRF7304PBF-1 | NCE60R360F | SGM3055 | RTR025N05FRA | S2N7002K

 

 

 

 

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