WMQ30N03T2. Аналоги и основные параметры
Наименование производителя: WMQ30N03T2
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 39 ns
Cossⓘ - Выходная емкость: 398 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0063 Ohm
Тип корпуса: PDFN3030-8L
Аналог (замена) для WMQ30N03T2
- подборⓘ MOSFET транзистора по параметрам
WMQ30N03T2 даташит
wmq30n03t2.pdf
WMQ30N03T2 30V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ30N03T2 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 30V, I = 30A DS D R
wmq30n02t1.pdf
WMQ30N02T1 20V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ30N02T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 20V, I =75A DS D R
wmq30n06ts.pdf
WMQ30N06TS 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ30N06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S G S S S S maintain superior switching performance. G S PDFN3030-8L Features V = 60V, I = 30A DS D R
wmq30n04ts.pdf
WMQ30N04TS 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMQ30N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet S G S S S S G maintain superior switching performance. S PDFN3030-8L Features V = 40V, I = 30A DS D R
Другие MOSFET... WMQ25P03T1 , WMQ25P04T1 , WMQ25P06TS , WMQ26P02TS , WMQ28N03T1 , WMQ30DN04TS , WMQ30DP03TS , WMQ30N02T1 , 5N60 , WMQ30N04TS , WMQ30N06TS , WMQ30P03T1 , WMQ30P04T1 , WMQ35P02TS , WMQ37N03T1 , WMQ40DN03T1 , WMQ40N03T1 .
History: 2SK1013 | IRF7304PBF-1 | NCE60R360F | SGM3055 | RTR025N05FRA | S2N7002K
History: 2SK1013 | IRF7304PBF-1 | NCE60R360F | SGM3055 | RTR025N05FRA | S2N7002K
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Список транзисторов
Обновления
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
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