Справочник MOSFET. FDS2672F085

 

FDS2672F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS2672F085
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 33 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS2672F085

 

 

FDS2672F085 Datasheet (PDF)

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

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August 2006FDS2672tmN-Channel UltraFET Trench MOSFET 200V, 3.9A, 70mFeatures General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductors advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance and ye

 7.2. Size:557K  fairchild semi
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February 2010FDS2672_F085tmN-Channel UltraFET Trench MOSFET 200V, 3.9A, 70mFeatures General Description Max rDS(on) = 70m at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductors advanced UItraFET Trench Max rDS(on) = 80m at VGS = 6V, ID = 3.5A process that has been especially tailored to minimize the on-state resistance

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SMD Type MOSFETN-Channel MOSFETFDS2672 (KDS2672)SOP-8 Features VDS (V) = 200V ID = 3.9A (VGS = 10V) RDS(ON) 70m (VGS = 10V)1.50 0.15 RDS(ON) 80m (VGS = 6V)5 46 3 5 Drain1 Source6 Drain2 Source7 27 Drain3 Source8 Drain8 1 4 Gate Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20

Другие MOSFET... FDQ7238AS , STF2458 , FDS2572 , FDS2582 , FDS2670 , STF2456 , FDS2672 , STF2455 , 4N60 , STF2454A , FDS2734 , FDS3512 , FDS3572 , FDS3590 , FDS3672 , STF2454 , FDS3692 .

 

 
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