Справочник MOSFET. 2SK2869

 

2SK2869 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2869
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 30 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Минимальное напряжение отсечки |Vgs(off)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 20 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 110 ns
   Выходная емкость (Cd): 380 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.045 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для 2SK2869

 

 

2SK2869 Datasheet (PDF)

 ..1. Size:95K  renesas
2sk2869.pdf

2SK2869
2SK2869

2SK2869(L), 2SK2869(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 0.033 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK(L

 0.1. Size:109K  renesas
rej03g1037 2sk2869lsds.pdf

2SK2869
2SK2869

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:1437K  kexin
2sk2869-zj.pdf

2SK2869
2SK2869

SMD Type MOSFETN-Channel MOSFET2SK2869-ZJ Features VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 45m (VGS = 10V) RDS(ON) 70m (VGS = 4V) High speed switchingDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 20 Pulsed Drain

 0.3. Size:355K  inchange semiconductor
2sk2869l.pdf

2SK2869
2SK2869

isc N-Channel MOSFET Transistor 2SK2869LFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 0.4. Size:287K  inchange semiconductor
2sk2869s.pdf

2SK2869
2SK2869

isc N-Channel MOSFET Transistor 2SK2869SFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Другие MOSFET... 2SK2802 , 2SK2803 , 2SK2804 , 2SK2805 , 2SK2848 , 2SK2849-01L , 2SK2849-01S , 2SK2851 , P0903BDG , 2SK2885 , 2SK2912 , 2SK2925 , 2SK2926 , 2SK2927 , 2SK2928 , 2SK2929 , 2SK2930 .

 

 
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