WMS09N06TS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMS09N06TS
Маркировка: Q30N06S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 14.5 nC
trⓘ - Время нарастания: 32.8 ns
Cossⓘ - Выходная емкость: 88 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
Тип корпуса: SOP-8L
Аналог (замена) для WMS09N06TS
WMS09N06TS Datasheet (PDF)
wms09n06ts.pdf
WMS09N06TS 60V N-Channel Enhancement Mode Power MOSFET Description DDDWMS09N06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 60V, I = 9A DS D R
wms090n04lg2.pdf
WMS090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS090N04LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures
wms090dnv6lg4.pdf
WMS090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS090DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8L
wms09p02ts.pdf
WMS09P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P02TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -20V, I = -9A DS DR
wms09dp03ts.pdf
WMS09DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS09DP03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1yet maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -9A DS DR
wms09p06ts.pdf
WMS09P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -60V, I = -8.5A DS DSOP-8LR
wms090nv6lg4.pdf
WMS090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS090NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features
wms099n10lgs.pdf
WMS099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures V =
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918