WMS09N06TS - Даташиты. Аналоги. Основные параметры

WMS09N06TS 60V N-Channel Enhancement Mode Power MOSFET Description DDDWMS09N06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 60V, I = 9A DS D R

WMS090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS090N04LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

WMS090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS090DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8L

WMS09P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P02TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -20V, I = -9A DS DR

WMS09DP03TS 30V Dual P-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS09DP03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1yet maintain superior switching performance. G1S2G2Features SOP-8L V = -30V, I = -9A DS DR

WMS09P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -60V, I = -8.5A DS DSOP-8LR

WMS090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS090NV6LG4 uses Wayon's 4th generation power trench MOSFET Stechnology that has been especially tailored to minimize the on-state SSresistance and yet maintain superior switching performance. This GSOP-8Ldevice is well suited for high efficiency fast switching applications. Features

WMS099N10LGS 100V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS099N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures V =