Справочник MOSFET. WMS09N06TS

 

WMS09N06TS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMS09N06TS
   Маркировка: Q30N06S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14.5 nC
   trⓘ - Время нарастания: 32.8 ns
   Cossⓘ - Выходная емкость: 88 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: SOP-8L
     - подбор MOSFET транзистора по параметрам

 

WMS09N06TS Datasheet (PDF)

 ..1. Size:791K  way-on
 wms09n06ts.pdf pdf_icon

WMS09N06TS

WMS09N06TS 60V N-Channel Enhancement Mode Power MOSFET Description DDDWMS09N06TS uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = 60V, I = 9A DS D R

 9.1. Size:746K  way-on
 wms090n04lg2.pdf pdf_icon

WMS09N06TS

WMS090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DDescriptionDDDWMS090N04LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S Sresistance and yet maintain superior switching performance. This SGdevice is well suited for high efficiency fast switching applications. SOP-8LFeatures

 9.2. Size:979K  way-on
 wms090dnv6lg4.pdf pdf_icon

WMS09N06TS

WMS090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET D1Description D1D2D2WMS090DNV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the S1G1S2on-state resistance and yet maintain superior switching performance. G2This device is well suited for high efficiency fast switching applications. SOP-8L

 9.3. Size:772K  way-on
 wms09p02ts.pdf pdf_icon

WMS09N06TS

WMS09P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionDDWMS09P02TS uses advanced power trench technology that has been DDespecially tailored to minimize the on-state resistance and yet maintain superior switching performance. S SSGFeatures SOP-8L V = -20V, I = -9A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: WNM2020-3 | WMS175N10HG4

 

 
Back to Top

 


 
.