SL4614 - описание и поиск аналогов

SL4614 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description D1 N Channel D1 D2 D2 40V/7.5A, RDS(ON) = 21m (max.) @ VGS = 10V S1 RDS(ON) = 25m (max.) @ VGS = 4.5V G1 S2 P Channel G2 -40V/-5.5A, Top View of SOP-8 RDS(ON) = 38m (max.) @ VGS =-10V (8) (7) (6) (5) D1 D1 RDS(ON) = 62m (max.) @ VGS =-4.5V D2 D2 100% UIS + Rg Tested Reliable and Rugged

PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 34.5m l High Speed Power Switching G max. 42m l Hard Switched and High Frequency Circuits ID 33A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capac

PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m ID 73A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

PD - 96906B IRFB4610 IRFS4610 IRFSL4610 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m Benefits l Improved Gate, Avalanche and Dynamic dV/dt ID 73A S Ruggedness l Fully Characterized Capacita

isc N-Channel MOSFET Transistor IRFSL4610 FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

Isc N-Channel MOSFET Transistor IRFS4615 FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150