SSB90R160SFD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSB90R160SFD
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 190 W
Предельно допустимое напряжение сток-исток |Uds|: 900 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 25 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 57.5 nC
Время нарастания (tr): 18 ns
Выходная емкость (Cd): 90 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.165 Ohm
Тип корпуса: TO263
Аналог (замена) для SSB90R160SFD
SSB90R160SFD Datasheet (PDF)
ssb90r160sfd ssw90r160sfd.pdf
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ssb90r240s2 ssw90r240s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor900V Super Junction Power MOSFET Gen-SS*90R240S2Rev. 1.0Dec. 2022www.supersemi.com.cnSSB90R240S2/SSW90R240S2900V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
ssb90r420s2 ssw90r420s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor900V Super Junction Power MOSFET Gen-SS*90R420S2Rev. 1.3Nov. 2022www.supersemi.com.cnSSB90R420S2/SSW90R420S2900V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance
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