SSB90R160SFD. Аналоги и основные параметры
Наименование производителя: SSB90R160SFD
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 190 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 90 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.165 Ohm
Тип корпуса: TO263
Аналог (замена) для SSB90R160SFD
- подборⓘ MOSFET транзистора по параметрам
SSB90R160SFD даташит
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Другие MOSFET... SSB65R360S2E , SSB65R600S2 , SSB80R160S2 , SSB80R160SFD , SSB80R180S2 , SSB80R240S2 , SSB80R240SFD , SSB80R380S2 , 75N75 , SSB90R240S2 , SSB90R260S , SSB90R420S2 , SSBG65R075SFD2 , SSF20N60S , SSF50R140SFD , SSF60R070S2E , SSF60R075SFD2 .
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