SSF70R1K2S2E. Аналоги и основные параметры
Наименование производителя: SSF70R1K2S2E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 27 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 20 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO220F
Аналог (замена) для SSF70R1K2S2E
- подборⓘ MOSFET транзистора по параметрам
SSF70R1K2S2E даташит
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Другие MOSFET... SSF65R1K2S2E , SSF65R260S2E , SSF65R260S2R , SSF65R360S2E , SSF65R600S2 , SSF65R600S2E , SSF65R600S3 , SSF70R190S2 , IRFP260N , SSF70R300S2R , SSF70R380S2 , SSF70R450S2 , SSF70R600S2 , SSF80R160S2 , SSF80R240S2 , SSF80R240SFD , SSF80R360S2 .
History: HM4822 | HM2302BWSR | BUK9Y113-100E
History: HM4822 | HM2302BWSR | BUK9Y113-100E
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Список транзисторов
Обновления
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