SSN65R360S2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSN65R360S2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 105 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 23.5 ns
Cossⓘ - Выходная емкость: 32 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: DFN4L-8X8
- подбор MOSFET транзистора по параметрам
SSN65R360S2 Datasheet (PDF)
ssn65r360s2.pdf

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SSN65R360S2Rev. 1.2Nov. 2023www.supersemi.com.cnSSN65R360S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge bal
ssn65r190s2.pdf

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SSN65R190S2Rev. 1.2Jun. 2022www.supersemi.com.cnSSN65R190S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge bal
ssn65r065sfd3.pdf

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySSN65R065SFD3Rev. 1.0Oct. 2023www.supersemi.com.cnSSN65R065SFD3650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process
ssn65r1k2s2e.pdf

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SSN65R1K2S2ERev. 1.0Jan. 2022www.supersemi.com.cnSSN65R1K2S2E650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge b
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History: FHF4N90A | APT901R1HN | IPD50R280CE | SIHFIBE30G | FDMS86183 | NDT6N70 | IXFE80N50
History: FHF4N90A | APT901R1HN | IPD50R280CE | SIHFIBE30G | FDMS86183 | NDT6N70 | IXFE80N50



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