SSP65R075SFD2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSP65R075SFD2
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 236 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 41 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 78 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 140 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
Тип корпуса: TO220
Аналог (замена) для SSP65R075SFD2
SSP65R075SFD2 Datasheet (PDF)
ssp65r075sfd2 ssw65r075sfd2.pdf
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R099S2ERev. 1.1Aug. 2022www.supersemi.com.cnSSF65R099S2E/SSP65R099S2E/SSW65R099S2E650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis util
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R090S2Rev. 1.2May. 2022www.supersemi.com.cnSSF65R090S2/SSP65R090S2/SSB65R090S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen- With Fast-RecoverySS*65R099SFDRev. 1.3Aug. 2022www.supersemi.com.cnSSF65R099SFD/SSP65R099SFD/SSW65R099SFD650V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family tha
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History: TPP80R300C