2SK2925. Аналоги и основные параметры

Наименование производителя: 2SK2925

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 20 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 55 ns

Cossⓘ - Выходная емкость: 190 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm

Тип корпуса: DPAK

Аналог (замена) для 2SK2925

- подборⓘ MOSFET транзистора по параметрам

 

2SK2925 даташит

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2SK2925

2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1039-0500 (Previous ADE-208-454B) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS = 0.060 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L

 0.1. Size:109K  renesas
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2SK2925

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:286K  inchange semiconductor
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2SK2925

isc N-Channel MOSFET Transistor 2SK2925S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =80m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 0.3. Size:354K  inchange semiconductor
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2SK2925

isc N-Channel MOSFET Transistor 2SK2925L FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =80m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

Другие IGBT... 2SK2805, 2SK2848, 2SK2849-01L, 2SK2849-01S, 2SK2851, 2SK2869, 2SK2885, 2SK2912, IRFB3607, 2SK2926, 2SK2927, 2SK2928, 2SK2929, 2SK2930, 2SK2931, 2SK2932, 2SK2933