SST65R190S3 - аналоги, параметры транзистора - Справочник транзисторов

SST65R190S3. Аналоги и основные параметры

Наименование производителя: SST65R190S3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 145 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14 ns

Cossⓘ - Выходная емкость: 52 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm

Тип корпуса: TO252

Аналог (замена) для SST65R190S3

- подборⓘ MOSFET транзистора по параметрам

SST65R190S3 даташит

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