SST70R190S3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SST70R190S3
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 145 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 29 nC
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 52 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO252
Аналог (замена) для SST70R190S3
SST70R190S3 Datasheet (PDF)
sst70r190s3.pdf
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Список транзисторов
Обновления
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