SSW65R022SFD3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSW65R022SFD3
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 460 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 96 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 228 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 420 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm
Тип корпуса: TO247
Аналог (замена) для SSW65R022SFD3
SSW65R022SFD3 Datasheet (PDF)
ssw65r022sfd3.pdf
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History: SVSP60R033P7HD4