FDS5670 - описание и поиск аналогов

August 1999 FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V to improve the overall efficiency of DC/DC converters using RDS(ON) = 0.017 @ VGS = 6 V. either synchronous or conventional switching PWM controllers. Low gate charge. These MOSFETs feature fas

FDS5670 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.012 at VGS = 10 V 12.6 60 10.5 nC Optimized for Low Side Synchronous 0.015 at VGS = 4.5 V 11.6 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCF

July 2005 FDS5672 N-Channel PowerTrench MOSFET 60V, 12A, 10m Features General Description rDS(ON) = 10m , VGS = 10V, ID = 12A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(ON) = 14m , VGS = 6V, ID = 10A either synchronous or conventional switching PWM controllers. It has been optimized for low gate cha

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

March 2000 FDS5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 7 A, 60 V. RDS(on) = 0.028 @ VGS = 10 V Semiconductor's advanced PowerTrench process that RDS(on) = 0.033 @ VGS = 6 V. has been especially tailored to minimize on-state resistance and yet maintain superior switching perf

February 2006 FDS5692Z N-Channel UltraFET Trench MOSFET 50V, 5.8A, 24m Features General Description Max rDS(on) = 24m at VGS = 10V, ID = 5.8A This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC Max rDS(on) = 33m at VGS = 4.5V, ID = 5.6A converters using either synchronous or conventional switching PWM controller

May 2008 FDS5682 N-Channel PowerTrench MOSFET 60V, 7.5A, 21m Features General Description rDS(ON) = 21m , VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(ON) = 26.5m , VGS = 4.5V, ID = 6.7A either synchronous or conventional switching PWM controllers. It has been optimized for low g

July 1999 FDS5680 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 8 A, 60 V. RDS(ON) = 0.020 @ VGS = 10 V Semiconductor's advanced PowerTrench process that RDS(ON) = 0.025 @ VGS = 6 V. has been especially tailored to minimize on-state resistance and yet maintain superior switching Low gate charge (30nC t

FDS5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using ON 7 A, 60 V. RDS(on) = 0.028 @ VGS = 10 V Semiconductor's advanced PowerTrench process that RDS(on) = 0.033 @ VGS = 6 V. has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (23nC typ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur