FDS6892A - описание и поиск аналогов

October 2001 FDS6892A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 24 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (12 nC) to minimize th

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2001 FDS6894A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 8 A, 20 V. RDS(ON) = 17 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 20 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 30 m @ VGS = 1.8 V to minimize

October 2001 FDS6894AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 8 A, 20 V. RDS(ON) = 17 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 20 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 30 m @ VGS = 1.8 V to minimize

November 1999 FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are 7.5 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5 V produced using Fairchild Semiconductor's advanced RDS(ON) = 0.022 @ VGS = 2.5 V. PowerTrench process that has been especially tailored to minimize the on-state resistance and yet mainta

February 2010 tm FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typica

October 2001 FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to min

OCTOBER 2001 FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to mini

FDS6898AZ-F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using ON Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to minimize the on-s

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS6890A www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2