FDS6900AS - описание и поиск аналогов

May 2005 FDS6900AS Dual N-Ch PowerTrench SyncFET General Description Features The FDS6900AS is designed to replace two single SO- Q2 Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous DC DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 8.2A, 30V RDS(on) = 22m @ VGS = 10V for notebook

MOSFET Dual N-Channel, POWERTRENCH), SyncFETt FDS6900AS General Description The FDS6900AS is designed to replace two single SO-8 MOSFETs www.onsemi.com and Schottky diode in synchronous DC DC power supplies that provide various peripheral voltages for notebook computers and other S1D2 S1D2 battery powered electronic devices. FDS6900AS contains two unique S1D2 30 V, N-channel, l

J May 2008 FDS6984AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984AS is designed to replace two single Q2 Optimized to minimize conduction losses SO-8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky diode DC DC power supplies that provide various peripheral 8.5A, 30V RDS(on) max= 20 m @ VGS

October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features 5.5 A, 30 V. RDS(ON) = 0.040 @ VGS = 10 V These N-Channel Logic Level MOSFETs are RDS(ON) = 0.055 @ VGS = 4.5 V. produced using Fairchild Semiconductor's advanced PowerTrench process that has been Fast switching speed. especially tailored to minimize the on-state Low gate cha

July 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.042 @ VGS = 4.5 V. DC/DC converters using either synchronous or Optimized for use in switc

April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are 3.5 A, 30 V. RDS(ON) = 0.090 @ VGS = 10 V RDS(ON) = 0.140 @ VGS = 4.5 V. produced using Fairchild Semiconductor's advanced PowerTrench process that has been Fast switching speed. especially tailored to minimize the on-state Low gate charge

February 1999 FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These P-Channel Logic Level MOSFETs are -6 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V, produced using Fairchild Semiconductor's advanced RDS(ON) = 0.045 @ VGS = -4.5 V. PowerTrench process that has been especially tailored Low gate charge (14.5nC typical). to minimize the on-state

March 2005 FDS6986AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6986AS is designed to replace two single SO- Q2 Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky body diode DC DC power supplies that provide various peripheral 7.9A, 30V RDS(on) = 20 m @ VG

March 2010 FDS6930B Dual N-Channel Logic Level PowerTrench MOSFET Features General Description 5.5 A, 30 V. RDS(ON) = 38 m @ VGS = 10 V These N-Channel Logic Level MOSFETs are produced using RDS(ON) = 50 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance Fast switching speed and y

June 1999 FDS6982 Dual N-Channel, Notebook Power Supply MOSFET General Description Features This part is designed to replace two single SO-8 MOSFETs Q2 8.6A, 30V. RDS(on) = 0.015 @ VGS = 10V in synchronous DC DC power supplies that provide the RDS(on) = 0.020 @ VGS = 4.5V various peripheral voltage rails required in notebook computers and other battery powered electronic

July 2003 FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 35 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switchi

October 2006 FDS6994S Dual Notebook Power Supply N-Channel PowerTrench SyncFet General Description Features The FDS6994S is designed to replace two single SO-8 Q2 Optimized to minimize conduction losses MOSFETs and Schottky diode in synchronous DC DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 8.2A, 30V

June 2003 FDS6990A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 18 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 23 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switc

May 2008 tmM FDS6982AS Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6982AS is designed to replace two single SO- Q2 Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky body diode DC DC power supplies that provide various peripheral 8.6A, 30V RDS(on) max= 13.5m @

March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m @ VGS = 10 V using Fairchild Semiconductor s advanced rDS(on) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resist

September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and

M March 2010 FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFET RDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC DC power sup- plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

June 2005 FDS6930B Dual N-Channel Logic Level PowerTrench MOSFET Features General Description 5.5 A, 30 V. RDS(ON) = 38 m @ VGS = 10 V These N-Channel Logic Level MOSFETs are produced using RDS(ON) = 50 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance Fast switching speed and ye

FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V using ON Semiconductor s advanced RDS(ON) = 35 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switching speed supe

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET Features General Description 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V RDS(ON) = 17 m @ VGS = 4.5 V These N-Channel Logic Level MOSFETs are produced Fast switching speed using ON Semiconductor s advanced PowerTrench process that has been especially tailored Low gate charge to minimize the o

M March 2010 FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description 7.5 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFET RDS(ON) = 28 m @ VGS = 4.5 V and two Schottky diodes in synchronous DC DC power sup- plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode versi

SMD Type MOSFET Dual N-Channel MOSFET FDS6930B (KDS6930B) SOP-8 Unit mm Features VDS (V) = 30V ID = 5.5 A (VGS = 10V) RDS(ON) 38m (VGS = 10V) 1.50 0.15 RDS(ON) 50m (VGS = 4.5V) Fast switching speed 1 S2 5 D1 6 D1 2 G2 High power and current handling capability 7 D2 3 S1 8 D2 4 G1 5 4 6 3 7 2 8 1 Absolute Maximum Ratings Ta