SWMN15N50D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SWMN15N50D
Маркировка: SW15N50D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 37 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 92 nC
Время нарастания (tr): 55 ns
Выходная емкость (Cd): 327 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.3 Ohm
Тип корпуса: TO220F
Аналог (замена) для SWMN15N50D
SWMN15N50D Datasheet (PDF)
swmn15n50d.pdf
SW15N50D N-channel Enhanced mode TO-220SF MOSFET TO-220SF BVDSS : 500V Features ID : 15A High ruggedness RDS(ON) : 0.22 Low RDS(ON) (Typ 0.22)@VGS=10V Low Gate Charge (Typ 92nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger, Adaptor 1. Gate 2. Drain 3. Source 3 General Description This
swmn15n65j swd15n65j.pdf
SW15N65JN-channel Enhanced mode TO-220SF/TO-252 MOSFETFeaturesTO-220SF TO-252BVDSS : 650V High ruggednessID : 15A Low RDS(ON) (Typ 0.22)@VGS=10VRDS(ON) : 0.22 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1122 Application:LED , Charger, PC Power 3311. Gate 2. Drain 3. SourceGeneral DescriptionThis p
swmn12n65da.pdf
SW12N65DA N-channel Enhanced mode TO-220SF MOSFET TO-220SF Features BVDSS : 650V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) :0.75 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED, Charger, PC Power 1 1. Gate 2. Drain 3. Source 3 General Description Th
swf10n65d swmn10n65d swy10n65d swp10n65d swu10n65d swj10n65d.pdf
SW10N65DN-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFETFeaturesTO-262 TO-262NTO-220F TO-220SF TO-220FT TO-220BVDSS : 650V High ruggednessID : 10A Low RDS(ON) (Typ 0.9)@VGS=10V Low Gate Charge (Typ 35nC)RDS(ON) : 0.9 Improved dv/dt Capability 100% Avalanche Tested2 Application: UPS,Inverter, 1 112 2 1 1 1
swmn12n65d swy12n65d.pdf
SW12N65D N-channel Enhanced mode TO-220SF/TO-220FT MOSFET TO-220SF TO-220FT BVDSS : 650V Features ID : 12A High ruggedness RDS(ON) : 0.66 Low RDS(ON) (Typ 0.66)@VGS=10V Low Gate Charge (Typ 41nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source
swp10n65k swf10n65k swn10n65k swd10n65k swu10n65k swmn10n65k.pdf
SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) :0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio
sw12n70d swf12n70d swu12n70d swmn12n70d swy12n70d.pdf
SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS : 700V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) : 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 Application:LED, PC Power, Char
swf12n70d swu12n70d swmn12n70d swy12n70d.pdf
SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS : 700V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) : 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 3 Application:LED, PC Power,
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