2SK2929 - описание и поиск аналогов

 ..1. Size:87K  renesas
 2sk2929.pdf 

2SK2929 Silicon N Channel MOS FET High Speed Power Switching REJ03G1043-0500 (Previous ADE-208-552C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source

 ..2. Size:288K  inchange semiconductor
 2sk2929.pdf 

isc N-Channel MOSFET Transistor 2SK2929 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 0.1. Size:101K  renesas
 rej03g1043 2sk2929ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:189K  1
 2sk2924.pdf 

Power F-MOS FETs 2SK2924 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed EAS > 100mJ unit mm VGSS = 30V guaranteed 4.6 0.2 High-speed switching tf = 35ns 9.9 0.3 2.9 0.2 No secondary breakdown 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid 2.6 0.1 1.2 0.15 Driving circuit for a motor 1.45 0.15 0.7 0.

 8.2. Size:155K  1
 2sk2923.pdf 

Power F-MOS FETs 2SK2923 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 4.6 0.2 No secondary breakdown 9.9 0.3 2.9 0.2 Low-voltage drive 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor 2.6 0.1 1.2 0.15 Control equipment 1.45 0

 8.3. Size:409K  toshiba
 2sk2920.pdf 

2SK2920 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2920 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gate drive Low drain-source ON resistance R = 0.56 (typ.) DS (ON) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 200 V) DS Enhancement-mod

 8.4. Size:96K  renesas
 2sk2926.pdf 

2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1040-0200 (Previous ADE-208-535) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.042 typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L)-(2)) (Package name DP

 8.5. Size:95K  renesas
 2sk2925.pdf 

2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1039-0500 (Previous ADE-208-454B) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS = 0.060 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L

 8.6. Size:87K  renesas
 2sk2928.pdf 

2SK2928 Silicon N Channel MOS FET High Speed Power Switching REJ03G1042-0400 (Previous ADE-208-551B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.040 typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3 Rev.4.00 Se

 8.7. Size:101K  renesas
 rej03g1042 2sk2928ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:94K  renesas
 2sk2927.pdf 

2SK2927 Silicon N Channel MOS FET High Speed Power Switching REJ03G1041-0600 (Previous ADE-208-550D) Rev.6.00 Sep 07, 2005 Features Low on-resistance RDS =0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source

 8.9. Size:109K  renesas
 rej03g1039 2sk2925lsds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.10. Size:103K  renesas
 rej03g1041 2sk2927ds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.11. Size:110K  renesas
 rej03g1040 2sk2926lsds.pdf 

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.12. Size:1480K  kexin
 2sk2926-zj.pdf 

SMD Type MOSFET N-Channel MOSFET 2SK2926-ZJ Features VDS (V) = 60V ID = 15 A (VGS = 10V) RDS(ON) 55m (VGS = 10V) RDS(ON) 110m (VGS = 4V) High speed switching D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 15 Pulsed Drai

 8.13. Size:279K  inchange semiconductor
 2sk2924.pdf 

isc N-Channel MOSFET Transistor 2SK2924 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.14. Size:279K  inchange semiconductor
 2sk2923.pdf 

isc N-Channel MOSFET Transistor 2SK2923 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.15. Size:289K  inchange semiconductor
 2sk2928.pdf 

isc N-Channel MOSFET Transistor 2SK2928 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 52m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.16. Size:286K  inchange semiconductor
 2sk2925s.pdf 

isc N-Channel MOSFET Transistor 2SK2925S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =80m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.17. Size:354K  inchange semiconductor
 2sk2926l.pdf 

isc N-Channel MOSFET Transistor 2SK2926L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =55m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.18. Size:261K  inchange semiconductor
 2sk2927.pdf 

isc N-Channel MOSFET Transistor 2SK2927 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 8.19. Size:354K  inchange semiconductor
 2sk2925l.pdf 

isc N-Channel MOSFET Transistor 2SK2925L FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =80m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.20. Size:286K  inchange semiconductor
 2sk2926s.pdf 

isc N-Channel MOSFET Transistor 2SK2926S FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =55m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d