SWP050R68E8T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SWP050R68E8T
Маркировка: SW050R68E8T
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 195.3 W
Предельно допустимое напряжение сток-исток |Uds|: 68 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 130 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 129 nC
Время нарастания (tr): 63 ns
Выходная емкость (Cd): 454 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.006 Ohm
Тип корпуса: TO220
Аналог (замена) для SWP050R68E8T
SWP050R68E8T Datasheet (PDF)
swp050r68e8t.pdf
SW050R68E8TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 68V High ruggednessID : 130A Low RDS(ON) (Typ 5.2m)@VGS=10VRDS(ON) : 5.2m Low Gate Charge (Typ 129nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des
swp050r95e8s swb050r95e8s.pdf
SW050R95E8SN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 100V High ruggednessID : 130A Low RDS(ON) (Typ 5.9m)@VGS=10V Low Gate Charge (Typ 50nC)RDS(ON) : 5.9m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Motor Drives11. Gate 2.Dra
swp050r95e8s.pdf
SW050R95E8SN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 100V High ruggednessID : 130A Low RDS(ON) (Typ 5.9m)@VGS=10V Low Gate Charge (Typ 50nC)RDS(ON) : 5.9m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Motor Drives11. Gate 2.Drain 3.SourceGeneral
swp058r75e7t.pdf
SW058R75E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 75V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des
swp058r72e7t.pdf
SW058R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des
swp056r68e7t swb056r68e7t.pdf
SW056R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 120A Low RDS(ON) (Typ 5.8m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) :5.8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.
swp058r06e7t swb058r06e7t.pdf
SW058R06E7TN-channel Enhanced mode TO-220/TO-263 MOSFETTO-220 TO-263FeaturesBVDSS : 60VID : 120A High ruggedness Low RDS(ON) (Typ 5.8m)@VGS=10VRDS(ON) : 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 21 12 2 100% Avalanche Tested3 3 Application:Telecom, Computer, Inverter11. Gate 2. Drain 3. Source3General Description
swp055r68e7t swb055r68e7t.pdf
SW055R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V ID : 110A Low Gate Charge (Typ 94nC)RDS(ON) : 5.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S
swb051r08es swp051r08es.pdf
SW051R08ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS : 80V TO-263 TO-220 ID : 120A High ruggedness Low RDS(ON) (Typ 5.1m)@VGS=10V RDS(ON) : 5.1m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application:Synchronous Rectification, 2 2 3 3 1 Li Battery Protect Board, Inverte
swp058r65e7t swb058r65e7t.pdf
SW058R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 6.1m)@VGS=10V ID : 100A Low Gate Charge (Typ 104nC)RDS(ON) : 6.1m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
