SWP050R68E8T datasheet, подбор замены

 ..1. Size:726K  samwin
 swp050r68e8t.pdf 

SW050R68E8T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 68V High ruggedness ID 130A Low RDS(ON) (Typ 5.2m )@VGS=10V RDS(ON) 5.2m Low Gate Charge (Typ 129nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Des

 7.1. Size:841K  samwin
 swp050r95e8s swb050r95e8s.pdf 

SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V High ruggedness ID 130A Low RDS(ON) (Typ 5.9m )@VGS=10V Low Gate Charge (Typ 50nC) RDS(ON) 5.9m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Dra

 7.2. Size:825K  samwin
 swp050r95e8s.pdf 

SW050R95E8S N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 100V High ruggedness ID 130A Low RDS(ON) (Typ 5.9m )@VGS=10V Low Gate Charge (Typ 50nC) RDS(ON) 5.9m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Drain 3.Source General

 9.1. Size:820K  samwin
 swp058r75e7t.pdf 

SW058R75E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 75V High ruggedness ID 100A Low RDS(ON) (Typ 6.3m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Des

 9.2. Size:823K  samwin
 swp058r72e7t.pdf 

SW058R72E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 72V High ruggedness ID 100A Low RDS(ON) (Typ 6.3m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Des

 9.3. Size:828K  samwin
 swp056r68e7t swb056r68e7t.pdf 

SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 120A Low RDS(ON) (Typ 5.8m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 5.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.

 9.4. Size:833K  samwin
 swp058r06e7t swb058r06e7t.pdf 

SW058R06E7T N-channel Enhanced mode TO-220/TO-263 MOSFET TO-220 TO-263 Features BVDSS 60V ID 120A High ruggedness Low RDS(ON) (Typ 5.8m )@VGS=10V RDS(ON) 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 1 2 2 100% Avalanche Tested 3 3 Application Telecom, Computer, Inverter 1 1. Gate 2. Drain 3. Source 3 General Description

 9.5. Size:816K  samwin
 swp055r68e7t swb055r68e7t.pdf 

SW055R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 5.6m )@VGS=10V ID 110A Low Gate Charge (Typ 94nC) RDS(ON) 5.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S

 9.6. Size:662K  samwin
 swb051r08es swp051r08es.pdf 

SW051R08ES N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS 80V TO-263 TO-220 ID 120A High ruggedness Low RDS(ON) (Typ 5.1m )@VGS=10V RDS(ON) 5.1m Low Gate Charge (Typ 44nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 Application Synchronous Rectification, 2 2 3 3 1 Li Battery Protect Board, Inverte

 9.7. Size:813K  samwin
 swp058r65e7t swb058r65e7t.pdf 

SW058R65E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 65V High ruggedness Low RDS(ON) (Typ 6.1m )@VGS=10V ID 100A Low Gate Charge (Typ 104nC) RDS(ON) 6.1m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.