SWP072R06ET - параметры транзистора MOSFET, его аналоги, datasheet

SWP072R06ET Datasheet (PDF)

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SW072R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 75A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 84nC) RDS(ON) : 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

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SW072R08ETN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220 BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.6m)@VGS=10VRDS(ON) : 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 21 1 Application:Synchronous Rectification, 2 23 3Inverter, Li Battery Protect Board11. Gate 2. Drain 3. So

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SW072R68E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :7.5m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descri

7.2. Size:665K samwin
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SW072R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 77nC)RDS(ON) :7.5m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Descr

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .