SWP085R06VT - параметры транзистора MOSFET, его аналоги, datasheet

SWP085R06VT Datasheet (PDF)

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SW085R06VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS : 60V High ruggedness ID : 50A Low RDS(ON) (Typ 8.0m)@VGS=4.5V (Typ 7.3m)@VGS=10V RDS(ON) : 8.0m @VGS=4.5V Low Gate Charge (Typ 87nC) 7.3m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 2 3 Application:Electronic Ballast , Motor Cont

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SW085R06V7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 60V High ruggednessID : 80A Low RDS(ON) (Typ 10.5m)@VGS=4.5V(Typ 8.3m)@VGS=10VRDS(ON) : 10.5m@VGS=4.5V Low Gate Charge (Typ 66nC)8.3m@VGS=10V1 Improved dv/dt Capability 23 100% Avalanche Tested2 Application:Synchronous Rectification,1. Gate 2.Drain 3.Source

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SW085R68E7TN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220BVDSS : 68V High ruggednessID : 75A Low RDS(ON) (Typ 9.5m)@VGS=10VRDS(ON) : 9.5m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.S

9.1. Size:742K samwin
swp088r08e8t swb088r08e8t.pdf pdf_icon

SW088R08E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggednessID : 80A Low RDS(ON) (Typ 9.4m)@VGS=10VRDS(ON) : 9.4m Low Gate Charge (Typ 89nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.S