SW100N10BN-channel Enhanced mode TO-220 MOSFETFeaturesBVDSS : 100VTO-220 High ruggedness ID : 120A Low RDS(ON) (Typ 6.7m)@VGS=10VRDS(ON) : 6.7m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 100% Avalanche Tested1 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2. Drain 3. Source3General

SW100N10A N-channel Enhanced mode TO-220 MOSFET Features BVDSS : 100V TO-220 High ruggedness ID : 100A Low RDS(ON) (Typ 5.9m)@VGS=10V RDS(ON) : 5.9m Low Gate Charge (Typ 127nC) Improved dv/dt Capability 2 100% Avalanche Tested Application:Synchronous Rectification, 1 2 Li Battery Protect Board, Inverter 3 1 1. Gate 2. Drain 3. S

SW100R10VT N-channel Enhanced mode TO-220/TO-251/TO-262 MOSFET Features TO-220 TO-251 TO-262 BVDSS : 100V High ruggedness ID : 69A Low RDS(ON) (Typ 11m)@VGS=4.5V (Typ 9.5m)@VGS=10V RDS(ON) : 11m @VGS=4.5V Low Gate Charge (Typ 73nC) 9.5m @VGS=10V Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 2 3 3 3

SW10N65DN-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFETFeaturesTO-262 TO-262NTO-220F TO-220SF TO-220FT TO-220BVDSS : 650V High ruggednessID : 10A Low RDS(ON) (Typ 0.9)@VGS=10V Low Gate Charge (Typ 35nC)RDS(ON) : 0.9 Improved dv/dt Capability 100% Avalanche Tested2 Application: UPS,Inverter, 1 112 2 1 1 1

SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS : 500V ID : 10A High ruggedness Low RDS(ON) (Typ 0.26)@VGS=10V RDS(ON) : 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application:LED, PC Power, Cha

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) :0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio

SAMWINSW10N65N-channel MOSFETTO-220F TO-220BVDSS : 650VFeaturesID : 10.0A High ruggednessRDS(ON) : 1.1ohm RDS(ON) (Max 1.1)@VGS=10V Gate Charge (Typ 47nC) Improved dv/dt Capability 1 122 2 100% Avalanche Tested3 31. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.This