Справочник MOSFET. SWT38N70K

 

SWT38N70K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SWT38N70K
   Маркировка: SW38N70K
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 357.2 W
   Предельно допустимое напряжение сток-исток |Uds|: 700 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 38 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 96 nC
   Время нарастания (tr): 64 ns
   Выходная емкость (Cd): 122 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.12 Ohm
   Тип корпуса: TO247

 Аналог (замена) для SWT38N70K

 

 

SWT38N70K Datasheet (PDF)

 ..1. Size:613K  samwin
swt38n70k.pdf

SWT38N70K
SWT38N70K

SW38N70K N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 700V ID : 38A High ruggedness Low RDS(ON) (Typ 0.1)@VGS=10V RDS(ON) :0.1 Low Gate Charge (Typ 96nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application:ChargerLEDUPSServicer 1. Gate 2. Drain 3. Source 3 General Description This

 8.1. Size:654K  samwin
swt38n65k2.pdf

SWT38N70K
SWT38N70K

SW38N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 79m Low RDS(ON) (Typ 79m)@VGS=10V Low Gate Charge (Typ 71nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , Servicer, UPS 1. Gate 2. Drain 3. Source 3 General Description This

 8.2. Size:612K  samwin
swt38n65k.pdf

SWT38N70K
SWT38N70K

SW38N65K N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 38A High ruggedness Low RDS(ON) (Typ 0.09)@VGS=10V RDS(ON) :0.09 Low Gate Charge (Typ 96nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application:ChargerLEDUPSServicer 1. Gate 2. Drain 3. Source 3 General Description

 8.3. Size:860K  samwin
swt38n65k2f swx38n65k2f.pdf

SWT38N70K
SWT38N70K

SW38N65K2F N-channel Enhanced mode TO-247/TO-220FB MOSFET Features TO-247 TO-220FB BVDSS : 650V ID : 38A High ruggedness Low RDS(ON) (Typ 83m)@VGS=10V RDS(ON) : 83m Low Gate Charge (Typ 71nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 1 3 3 Application: Charge, LED , Servicer, UPS 1. Gate 2. Drain 3. Source Gener

 8.4. Size:707K  samwin
sw38n65kf swt38n65kf.pdf

SWT38N70K
SWT38N70K

SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 95m Low RDS(ON) (Typ 95m)@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application:LED, UPS, Charge, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This p

 8.5. Size:621K  samwin
swt38n65kf.pdf

SWT38N70K
SWT38N70K

SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 95m Low RDS(ON) (Typ 95m)@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application:LED, UPS, Charger, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This

 8.6. Size:604K  samwin
swt38n60k.pdf

SWT38N70K
SWT38N70K

SW38N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 600V TO-247 ID : 38A High ruggedness Low RDS(ON) (Typ 0.084)@VGS=10V RDS(ON) :0.084 Low Gate Charge (Typ 96nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application:ChargerLEDUPSServicer 1. Gate 2. Drain 3. Source 3 General Description

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top