Справочник MOSFET. S60N15R

 

S60N15R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: S60N15R
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 208 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
   Пороговое напряжение включения |Ugs(th)|: 3.6 V
   Максимально допустимый постоянный ток стока |Id|: 155 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 114 nC
   Время нарастания (tr): 16 ns
   Выходная емкость (Cd): 862 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0042 Ohm
   Тип корпуса: TO220

 Аналог (замена) для S60N15R

 

 

S60N15R Datasheet (PDF)

 ..1. Size:324K  cn si-tech
s60n15r s60n15s s60n15rn s60n15rp.pdf

S60N15R
S60N15R

S60N15R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=60V,ID=155A DC Motor Control Rds(on)(typ)=3.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D

 9.1. Size:2299K  1
s60n12r s60n12s s60n12rn s60n12rp.pdf

S60N15R
S60N15R

S60N12R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=60V,ID=120A DC Motor Control Rds(on)(typ)=4.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

 9.2. Size:535K  jilin sino
jcs60n10i.pdf

S60N15R
S60N15R

N N-CHANNEL MOSFET JCS60N10I MAIN CHARACTERISTICS Package ID 60A VDSS 100V Rdson-max - 16m (@Vgs=10V Qg-typ 51nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive app

 9.3. Size:975K  cn si-tech
s60n10m.pdf

S60N15R
S60N15R

S60N10MSI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures ApplicationsV =60V,I =100ADS DDC Motor ControlRds(on)(typ)=4.8m@Vgs=10VDC-DC Converters100% Avalanche TestedBMS100% Rg TestedSMPSLead-Free (RoHS Compliant)Automotive EnvironmentInternal Circuit and Pin DescriptionDDGGSSPackage

 9.4. Size:2285K  cn si-tech
s60n18r s60n18s s60n18rn s60n18rp.pdf

S60N15R
S60N15R

S60N18R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=60V,ID=180A DC Motor Control Rds(on)(typ)=2.8m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

 9.5. Size:2299K  cn si-tech
s60n12r s60n12s s60n12rn s60n12rp.pdf

S60N15R
S60N15R

S60N12R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=60V,ID=120A DC Motor Control Rds(on)(typ)=4.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

 9.6. Size:550K  cn hmsemi
hms60n10d.pdf

S60N15R
S60N15R

HMS60N10DN-Channel Super Trench Power MOSFET Primary Version Description The HMS60N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching an

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