S70N06RN. Аналоги и основные параметры
Наименование производителя: S70N06RN
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 88 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 70 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 57 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 198 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0132 Ohm
Тип корпуса: TO220
Аналог (замена) для S70N06RN
- подборⓘ MOSFET транзистора по параметрам
S70N06RN даташит
s70n06r s70n06s s70n06rn s70n06rp.pdf
S70N06R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=70V,ID=57A DC Motor Control Rds(on)(typ)=11.5m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D
rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic
rf1s70n06.pdf
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic
hrs70n06k.pdf
December 2014 BVDSS = 60 V RDS(on) typ HRS70N06K ID = 80 A 60V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 5.6 (Typ.) @VGS=10V 100% Avalanche Test
Другие MOSFET... S65N07M , S68N08RN , S68N08RP , S68N08ZR , S68N08ZS , S68N08ZRN , S68N08ZRP , S70N06R , AON7403 , S70N06RP , S70N06S , S70N08ZR , S70N08ZS , S70N08ZRN , S70N08ZRP , S8045R , S8045RN .
History: AP70WN2K8L | AP75T12GI
History: AP70WN2K8L | AP75T12GI
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