Справочник MOSFET. FDS86242

 

FDS86242 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDS86242
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 1.5 ns
   Cossⓘ - Выходная емкость: 64 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.067 Ohm
   Тип корпуса: SO-8
     - подбор MOSFET транзистора по параметрам

 

FDS86242 Datasheet (PDF)

 ..1. Size:251K  fairchild semi
fds86242.pdfpdf_icon

FDS86242

August 2010FDS86242N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren

 ..2. Size:678K  onsemi
fds86242.pdfpdf_icon

FDS86242

Sept 2017FDS86242N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 AThis N -Channel MOSFET is produ ced using ON Semiconductors advanced Power T rench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching per formance and High performance trench te

 ..3. Size:819K  cn vbsemi
fds86242.pdfpdf_icon

FDS86242

FDS86242www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO-

 7.1. Size:238K  fairchild semi
fds86240.pdfpdf_icon

FDS86242

June 2010FDS86240N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 mFeatures General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre

Другие MOSFET... FDS8449F085 , FDS86106 , SP8010E , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 , AON7506 , FDS86252 , FDS8638 , FDS8813NZ , SP632S , FDS8817NZ , SP4412 , FDS8840NZ , FDS8842NZ .

History: FCPF7N60YDTU | SPD04N60S5 | SM6A12NSFP | ZVP2120ASTOA | AP6679GI-HF

 

 
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