Справочник MOSFET. HGA059N08A

 

HGA059N08A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HGA059N08A
   Маркировка: GA059N08A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 49 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 42 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 502 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для HGA059N08A

 

 

HGA059N08A Datasheet (PDF)

 ..1. Size:973K  cn hunteck
 hga059n08a.pdf

HGA059N08A HGA059N08A

HGA059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching5.3RDS(on),typ mW Enhanced Body diode dv/dt capability49 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2TO-220

 7.1. Size:812K  cn hunteck
 hga059n12sl.pdf

HGA059N08A HGA059N08A

HGA059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic Level5RDS(on),typ m Enhanced Body diode dv/dt capability67 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2 Power Tools

 7.2. Size:812K  cn hunteck
 hga059n12s.pdf

HGA059N08A HGA059N08A

HGA059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.7RDS(on),typ m Enhanced Body diode dv/dt capability66.7 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainTO-220FPin2 Power Tools

 9.1. Size:762K  cn hunteck
 hga058n08sl.pdf

HGA059N08A HGA059N08A

HGA058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.9RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness63 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSDrain Hard Swit

 9.2. Size:771K  cn hunteck
 hga053n06sl.pdf

HGA059N08A HGA059N08A

HGA053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level4.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness54 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 9.3. Size:913K  cn hunteck
 hga053n06s.pdf

HGA059N08A HGA059N08A

P-1HGA053N06S60V N-Ch Power MOSFET60 VVDSFeature4.8RDS(on),typ mW Optimized for high speed switching56 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin

 9.4. Size:788K  cn hunteck
 hga055n10sl.pdf

HGA059N08A HGA059N08A

HGA055N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature4.9RDS(on),typ VGS=10V m Optimized for high speed smooth 5.8RDS(on),typ VGS=4.5V mswitching,Logic level 62.7 A ID Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and High Speed Circui

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top