April 2009FDS8840NZN-Channel PowerTrench MOSFET 40 V, 18.6 A, 4.5 mFeatures General Description Max rDS(on) = 4.5 m at VGS = 10 V, ID = 18.6 AThe FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 6.0 m at VGS = 4.5 V, ID = 14.9 Apackage technologies have been combined to offer the lowest

February 2009FDS8842NZN-Channel PowerTrench MOSFET 40 V, 14.9 A, 7.0 mFeatures General Description Max rDS(on) = 7.0 m at VGS = 10 V, ID = 14.9 AThe FDS8842NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.6 m at VGS = 4.5 V, ID = 11.6 Apackage technologies have been combined to offer the lowe

December 2008FDS8882N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 mFeatures General Description Max rDS(on) = 20.0 m at VGS = 10 V, ID = 9 AThe FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8 A package technologies have been combined to offer the lowest rDS(o

February 2006FDS8884N-Channel PowerTrench MOSFET30V, 8.5A, 23mGeneral Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5Aeither synchronous or conventional switching PWM controllers. It has been opt

May 2009FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0m P-Channel: -30V, -7.3A, 20.5mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 17m at VGS = 10V, ID = 8.6Aadvanced PowerTrench process that has been especially Max rDS(on)

November 2008FDS8812NZN-Channel PowerTrench MOSFET 30V, 20A, 4.0mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.0m at VGS = 10V, ID = 20ASemiconductors advanced PowerTrench process that has Max rDS(on) = 4.9m at VGS = 4.5V, ID =18A been especially tailored to minimize the on-state resistance. HBM ESD protection

April 2007tmFDS8896N-Channel PowerTrench MOSFET 30V, 15A, 6.0mFeatures General Description rDS(on) = 6.0m, VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.3m, VGS = 4.5V, ID = 14Aeither synchronous or conventional switching PWM controllers. It has been optimized for l

April 2007tmFDS8876N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2mFeatures General Description rDS(on) = 8.2m, VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m, VGS = 4.5V, ID = 11.4Aeither synchronous or conventional switching PWM controllers. It has been optimize

November 2008FDS8817NZN-Channel PowerTrench MOSFET 30V, 15A, 7.0mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7m at VGS = 10V, ID = 15ASemiconductors advanced PowerTrench process that has Max rDS(on) = 10m at VGS = 4.5V, ID =12.6A been especially tailored to minimize the on-state resistance. HBM ESD protection leve

April 2007tmFDS8870N-Channel PowerTrench MOSFET 30V, 18A, 4.2mFeatures General Description rDS(on) = 4.2m, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m, VGS = 4.5V, ID = 17Aeither synchronous or conventional switching PWM controllers. It has been optimized for l

April 2007tmFDS8880N-Channel PowerTrench MOSFET 30V, 11.6A, 10mFeatures General Description rDS(on) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m, VGS = 4.5V, ID = 10.7Aeither synchronous or conventional switching PWM controllers. It has been optimized fo

November 2008FDS8813NZN-Channel PowerTrench MOSFET 30V, 18.5A, 4.5mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.5m at VGS = 10V, ID = 18.5ASemiconductors advanced PowerTrench process that has Max rDS(on) = 6.0m at VGS = 4.5V, ID =16A been especially tailored to minimize the on-state resistance. HBM ESD protect

December 2008FDS8878N-Channel PowerTrench MOSFET 30V, 10.2A, 14mFeatures General Description rDS(on) = 14m, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m, VGS = 4.5V, ID = 9.3Aeither synchronous or conventional switching PWM controllers. It has been optimized for

April 2007tmFDS8874N-Channel PowerTrench MOSFET 30V, 16A, 5.5mFeatures General Description rDS(on) = 5.5m, VGS = 10V, ID = 16A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.0m, VGS = 4.5V, ID = 15Aeither synchronous or conventional switching PWM controllers. It has been optimized for l

February 2006FDS8884N-Channel PowerTrench MOSFET30V, 8.5A, 23mGeneral Descriptions Features Max rDS(on) = 23m at VGS = 10V, ID = 8.5AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m at VGS = 4.5V, ID = 7.5Aeither synchronous or conventional switching PWM controllers. It has been opt

FDS8896N-Channel PowerTrench MOSFET30V, 15A, 6.0mFeatures General Description rDS(on) = 6.0m, VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.3m, VGS = 4.5V, ID = 14Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, l

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS8880N-Channel PowerTrench MOSFET30V, 11.6A, 10mFeatures General Description rDS(on) = 10m, VGS = 10V, ID = 11.6A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 12m, VGS = 4.5V, ID = 10.7Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate charge

FDS8812NZwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch