HGP050N14S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HGP050N14S
Маркировка: GP050N14S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 357 W
Предельно допустимое напряжение сток-исток |Uds|: 135 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 180 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 68 nC
Время нарастания (tr): 22 ns
Выходная емкость (Cd): 533 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.005 Ohm
Тип корпуса: TO-220
Аналог (замена) для HGP050N14S
HGP050N14S Datasheet (PDF)
hgb050n14s hgp050n14s.pdf
,HGB050N14S HGP050N14S P-1135V N-Ch Power MOSFETFeature135 VVDS High Speed Power Smooth Switching4.5RDS(on),TYP m Enhanced Body diode dv/dt capability175 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching a
hgp050n10al.pdf
HGP050N10ALP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 4.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 125 AID 100% UIS Tested, 100% Rg Tested Lead Free Application Drain Synchronous Rectification in SMPS Hard Switching and
hgb050n10a hgp050n10a.pdf
, P-1HGB050N10A HGP050N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 4.5RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 4.8RDS(on),typ mW Enhanced Avalanche Ruggedness125 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220TO-263 Hard Switching and Hig
hgb059n08a hgp059n08a.pdf
, P-1HGB059N08AHGP059N08A80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 4.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 5.2RDS(on),typ mW Enhanced Avalanche Ruggedness97 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
hgb059n12s hgp059n12s.pdf
,HGB059N12S HGP059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 4.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 4.7RDS(on),typ m Enhanced Avalanche Ruggedness160 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectif
hgb057n15s hgk057n15s hgp057n15s.pdf
,HGB057N15S HGK057N15S P-1HGP057N15S150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Smooth Switching TO-263 5.3RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-247 5.4RDS(on),TYP mW Enhanced Avalanche Ruggedness TO-220 5.5RDS(on),TYP mW 100% UIS Tested, 100% Rg Tested 161 A Lead Free ID (Sillicon Limited)Application Synchr
hgb058n08sl hgp058n08sl.pdf
HGB058N08SL, HGP058N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level4.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness4.3RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested5.9RDS(on),typ VGS=4.5V m Lead Free130 AID (Sillicon Limit
hgb059n12sl hgp059n12sl.pdf
,HGB059N12SL HGP059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 4.7RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 5.3RDS(on),typ m Enhanced Avalanche Ruggedness160 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Syn
hgb055n12s hgp055n12s.pdf
, P-1HGB055N12S HGP055N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 4.8RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 5.1RDS(on),typ mW Enhanced Avalanche Ruggedness146 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchi
hgb053n06sl hgp053n06sl.pdf
HGB053N06SL , HGP053N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level3.9RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability5.3RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness4.1RDS(on),typ VGS=10V m 100% UIS Tested, 100% Rg Tested5.6RDS(on),typ VGS=4.5V m Lead Free, Halogen Free105 AID
hgb053n06s hgp053n06s.pdf
, P-1HGB053N06S HGP053N06S60V N-Ch Power MOSFET60 VVDSFeatureTO-263 4.3RDS(on),typ mW Optimized for high speed switchingTO-220 4.6RDS(on),typ mW Enhanced Body diode dv/dt capability112 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchrono
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