Справочник MOSFET. FDS8878

 

FDS8878 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDS8878
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 29 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: SO-8
     - подбор MOSFET транзистора по параметрам

 

FDS8878 Datasheet (PDF)

 ..1. Size:652K  fairchild semi
fds8878.pdfpdf_icon

FDS8878

December 2008FDS8878N-Channel PowerTrench MOSFET 30V, 10.2A, 14mFeatures General Description rDS(on) = 14m, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m, VGS = 4.5V, ID = 9.3Aeither synchronous or conventional switching PWM controllers. It has been optimized for

 8.1. Size:622K  fairchild semi
fds8876.pdfpdf_icon

FDS8878

April 2007tmFDS8876N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2mFeatures General Description rDS(on) = 8.2m, VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m, VGS = 4.5V, ID = 11.4Aeither synchronous or conventional switching PWM controllers. It has been optimize

 8.2. Size:684K  fairchild semi
fds8870.pdfpdf_icon

FDS8878

April 2007tmFDS8870N-Channel PowerTrench MOSFET 30V, 18A, 4.2mFeatures General Description rDS(on) = 4.2m, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m, VGS = 4.5V, ID = 17Aeither synchronous or conventional switching PWM controllers. It has been optimized for l

 8.3. Size:625K  fairchild semi
fds8874.pdfpdf_icon

FDS8878

April 2007tmFDS8874N-Channel PowerTrench MOSFET 30V, 16A, 5.5mFeatures General Description rDS(on) = 5.5m, VGS = 10V, ID = 16A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.0m, VGS = 4.5V, ID = 15Aeither synchronous or conventional switching PWM controllers. It has been optimized for l

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK2412 | ELM544539A | HM4409 | SI1402DH | 2N4338 | VS3622AE | IXFH6N90

 

 
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