HGP080N10A - аналоги, параметры транзистора - Справочник транзисторов

HGP080N10A технические параметры

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, P-1 HGB080N10A HGP080N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 7.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 7.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 84.3 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching

0.1. Size:924K cn hunteck
hgb080n10al hgp080n10al.pdf pdf_icon

HGB080N10AL , HGP080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 7.1 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 9.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 85 A ID (Sillico

5.1. Size:944K cn hunteck
hgp080n10s.pdf pdf_icon

HGP080N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 7.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 82 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Pin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

5.2. Size:1002K cn hunteck
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